2 metal films rolled up together w an insulator beween them and later packaged.
3 ways to store more charges
1. increase capacitance w/o changing voltage.
2. increase voltage allowing more charges to be stored.
3. do both
Farad's law
to get the total # of charges stored(coulumbs) we must combine the total of capacitance and volts. Q=CV
What is another one of Farad's law?
if 2 terminals touch, charges will become 0.0V which is the quickest way to remove charges.
What does Farad's law say about plates?
you need a voltage difference between 2 plates so an electric field.
what happens when there is more voltage difference at the electric field?
electric field gets stronger allowing more charges to be stored
whats another way to strengthen the elctric field?
add more surface area.
overlapping area
where electric field can reach from 1 plate to the other
the farther metal plates are from each other
lower voltage and less capacitance
the closer metal plates are to each other
higher voltage and more capacitance
why does the active gate area have high capacitance (C) ?
the oxide so thin making the distance small= high cap
what are most capacitors built by?
mosfets because it creates most of the capacitance w/out taking too much surface area
what is sheet Rho's equation?
ρ=R⋅□/A
Capacitors in Parallel
Cab=C1+C2+C3
capacitors in series
1/Cab=1/C1+1/C2+1/C3
reason why too much overlapping layers can be an issue?
creates unwelcome parasitic capacitance
which capacitors or more common?
in series
what is kirchoff's coulomb law?
Qab/Cab =Vab
what happens to charges (Q) when capacitors are in series?
the charges are shared so they all have the same charge.
more capacitors in series means
less capacitance
why do we get less capacitance in series: the total capacitance decreases because the voltagedrop across each capacitor adds up and the smallest capacitance limits how much charge the whole series can hold.
RC time constant: in resistor and capacitor circuits, its the time it takes voltage of capacitor/resistors to fully be charged.