1. Memory cells are etched onto a silicon wafer in an array of columns (bitlines) and rows (wordlines)
2. DRAM sends a charge (electrical signal called a strobe) through the appropriate column (CAS) to activate the transistor at each bit in the column
3. When writing, the row lines contain the state the capacitor should take on. When reading, the sense-amplifier determines the level of charge in the capacitor
4. The counter tracks the refresh sequence based on which rows have been accessed in what order
5. The memory controller performs functions like identifying the type, speed and amount of memory and checking for errors