semi conductors

Cards (26)

  • Diffusion of charges
    1. Electrons from N-side diffuse to P-side
    2. Holes from P-side diffuse to N-side
    3. Diffusion current produced
  • Diffusion current
    Caused by motion of holes from P-side to N-side and electrons from N-side to P-side
  • Formation of barrier electric field
    1. Positively charged dopant atoms on N-side
    2. Negatively charged dopant atoms on P-side
    3. Potential difference between N-side and P-side
    4. Barrier electric field formed
  • Barrier electric field
    Resists diffusion current, promotes drift current of electrons to N-side and holes to P-side
  • When diffusion current = drift current, the diode is ready to be used
  • There e and holes produced due to voltic, emission under the influence of the strong existing in the depletion region holer mone towards the poside and electrone move towards the N-side.
  • The process of breakdown of a diode is imevaible Breakdown In a highly doped diode Zener Breakdown In a lightly doped diode Avalanche Breakdown
  • Breakdown of a diode
    1. Zener Breakdown (highly doped diode)
    2. Avalanche Breakdown (lightly doped diode)
  • VI characteristics of a diode
    Relating the voltage applied across the diode with the current procedure in/across the diode
  • As the forward voltage (Uforward) increases

    The forward current (Iforward) increases very small initially, but after a certain value it increases heavily
  • Reverse current (Ireverse)
    It will be very small, in the range of microamperes (μA)
  • Zener Breakdown happens easily in a Zener diode compared to Avalanche Breakdown
  • In a Zener diode, the Ebarrier (strong) already exists in the PN Junction even in the unbiased state
  • In a Zener diode, even a small reverse voltage (VR) will be enough to breakdown the diode
  • Zener Diode
    Shows an irreversible breakdown at a certain potential (Zener Breakdown potential, UB)
  • Zener diode works as a voltage regulator; the potential across it will be constant at VB
  • Solar cell
    Similar working to a photodiode, but the diode is unbiased
  • To facilitate photons to fall in the depletion region and produce e-h pairs, the n-side of the solar cell is made extremely thin
  • Suitable materials for solar cells
    • Eg should be close to 1.5ev
    • High optical absorption
    • High electrical conductivity
  • Light Emitting Diode (LED)

    A highly doped diode working in the forward biased state, producing light energy (photons) from electrical energy
  • As the forward current (Iforward) increases
    The intensity of light produced increases, but only to a certain extent
  • Frequency of photons released
    Depends on the Energy Gap (Eg) of the semiconductor material
  • Rectifier
    A device that converts AC to DC
  • Half wave rectifier
    1. Diode is forward biased for half the cycle, giving output
    2. Diode is reverse biased for half the cycle, no output
  • Full wave rectifier
    Both diodes contribute to the output during the full cycle
  • To connect the input with the output, a transformer is used in a rectifier circuit