Electrical behavior is based on the electronic structure inherent in the pure material, with two types of charge carrier: free electrons and holes (positively charged particle-charge that is of the same magnitude as that for an electron, but of opposite sign)
Pure semiconductor material like silicon, where the crystal lattice structure forms an excellent insulator since all the atoms are bound to one another and are not free for current flow
Electrons are majority carriers by virtue of their density or concentration; holes, on the other hand, are the minority charge carriers (n >> p), with Fermi energy level shifted upward in the band gap, to within the vicinity of the donor state
Opposite effect from n-type, with holes present in much higher concentrations than electrons (p>>n), and a hole imagined to be created in the valence band
Extrinsic semiconductors (both n- and p-type) are produced from materials that are initially of extremely high purity, commonly having total impurity contents on the order of 10^-7 at%
Semiconductor doped with trivalent/acceptor impurities like aluminum, indium, gallium, and boron, which create holes that can attract electrons for current flow
In N-type semiconductors, electrons are the majority carriers and holes are the minority carriers. In P-type semiconductors, holes are the majority carriers and electrons are the minority carriers.