Semiconductor Diode (Forward Bias)

• P type is in the positive terminal
• N type is in the negative terminal
• The depletion region will decrease because of the holes will combine with the negative ions. And electron will combine with the positive ions
• increasing the bias potential the width of depletion layer will reduce
• the barrier potential is also decreasing
• the barrier potential of silicon is 0.7v
• saturation current remains the same because the minority charge carriers only depends on temperature
• A forward-bias or “on” condition is established by applying the positive potential to the p-type material and the negative potential to the n-type material
• the potential (vd) pressure electrons in the n-type materials and holes in p-type to recombine with the ions near the boundary
• the reduction in the width of the depletion region has resulted in a heavy majority flow across the junction.
• As the applied bias increases in magnitude the depletion region will continue to decrease in width until a flood of electrons can pass through the junction